Cryogenic Study and Modeling of Igbts
نویسندگان
چکیده
The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25 °C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed. 1
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